White light-emitting diodes (WLEDs) composed of blue LED chip, yellow phosphor, and red quantum dots (QDs) are considered as a potential alternative for next-generation artificial light source with their high luminous efficiency (LE) and color-rendering index (CRI) while QDs' poor temperature stability and the incompatibility of QDs/silicone severely hinder the wide utilization of QDs-WLEDs. To relieve this, here we proposed a separated QDs@silica nanoparticles (QSNs)/phosphor structure, which composed of a QSNs-on-chip layer with a yellow phosphor layer above. A silica shell was coated onto the QDs surface to solve the compatibility problem between QDs and silicone. With CRI > 92 and R9 > 90, the newly proposed QSNs-based WLEDs present 16.7% higher LE and lower QDs working temperature over conventional mixed type WLEDs. The reduction of QDs' temperature can reach 11.5 °C, 21.3 °C, and 30.3 °C at driving current of 80 mA, 200 mA, and 300 mA, respectively.
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September 2019
Research-Article
Reduced Working Temperature of Quantum Dots-Light-Emitting Diodes Optimized by Quantum Dots at Silica-on-Chip Structure
Bin Xie,
Bin Xie
School of Energy and Power Engineering,
Huazhong University of Science and Technology,
Wuhan 430074, China
Huazhong University of Science and Technology,
Wuhan 430074, China
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Haochen Liu,
Haochen Liu
Department of Electrical and Electronic
Engineering,
Southern University of Science and Technology,
Shenzhen 518055, China
Engineering,
Southern University of Science and Technology,
Shenzhen 518055, China
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Xiao Wei Sun,
Xiao Wei Sun
Department of Electrical and Electronic
Engineering,
Southern University of Science and Technology,
Shenzhen 518055, China
Engineering,
Southern University of Science and Technology,
Shenzhen 518055, China
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Xingjian Yu,
Xingjian Yu
School of Energy and Power Engineering,
Huazhong University of Science and Technology,
Wuhan 430074, China
Huazhong University of Science and Technology,
Wuhan 430074, China
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Ruikang Wu,
Ruikang Wu
School of Energy and Power Engineering,
Huazhong University of Science and Technology,
Wuhan 430074, China
Huazhong University of Science and Technology,
Wuhan 430074, China
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Kai Wang,
Kai Wang
Department of Electrical and Electronic
Engineering,
Southern University of Science and Technology,
Shenzhen 518055, China
Engineering,
Southern University of Science and Technology,
Shenzhen 518055, China
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Xiaobing Luo
Xiaobing Luo
School of Energy and Power Engineering,
Huazhong University of Science and Technology,
Wuhan 430074, China
e-mail: luoxb@hust.edu.cn
Huazhong University of Science and Technology,
Wuhan 430074, China
e-mail: luoxb@hust.edu.cn
1Corresponding author.
Search for other works by this author on:
Bin Xie
School of Energy and Power Engineering,
Huazhong University of Science and Technology,
Wuhan 430074, China
Huazhong University of Science and Technology,
Wuhan 430074, China
Haochen Liu
Department of Electrical and Electronic
Engineering,
Southern University of Science and Technology,
Shenzhen 518055, China
Engineering,
Southern University of Science and Technology,
Shenzhen 518055, China
Xiao Wei Sun
Department of Electrical and Electronic
Engineering,
Southern University of Science and Technology,
Shenzhen 518055, China
Engineering,
Southern University of Science and Technology,
Shenzhen 518055, China
Xingjian Yu
School of Energy and Power Engineering,
Huazhong University of Science and Technology,
Wuhan 430074, China
Huazhong University of Science and Technology,
Wuhan 430074, China
Ruikang Wu
School of Energy and Power Engineering,
Huazhong University of Science and Technology,
Wuhan 430074, China
Huazhong University of Science and Technology,
Wuhan 430074, China
Kai Wang
Department of Electrical and Electronic
Engineering,
Southern University of Science and Technology,
Shenzhen 518055, China
Engineering,
Southern University of Science and Technology,
Shenzhen 518055, China
Xiaobing Luo
School of Energy and Power Engineering,
Huazhong University of Science and Technology,
Wuhan 430074, China
e-mail: luoxb@hust.edu.cn
Huazhong University of Science and Technology,
Wuhan 430074, China
e-mail: luoxb@hust.edu.cn
1Corresponding author.
Contributed by the Electronic and Photonic Packaging Division of ASME for publication in the JOURNAL OF ELECTRONIC PACKAGING. Manuscript received September 27, 2018; final manuscript received November 19, 2018; published online April 10, 2019. Assoc. Editor: Changqing Chen.
J. Electron. Packag. Sep 2019, 141(3): 031001 (6 pages)
Published Online: April 10, 2019
Article history
Received:
September 27, 2018
Revised:
November 19, 2018
Citation
Xie, B., Liu, H., Sun, X. W., Yu, X., Wu, R., Wang, K., and Luo, X. (April 10, 2019). "Reduced Working Temperature of Quantum Dots-Light-Emitting Diodes Optimized by Quantum Dots at Silica-on-Chip Structure." ASME. J. Electron. Packag. September 2019; 141(3): 031001. https://doi.org/10.1115/1.4042981
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