The problem of self-heating in microelectronic devices has begun to emerge as a bottleneck to device performance. Published models for phonon transport in microelectronics have used a gray Boltzmann transport equation (BTE) and do not account adequately for phonon dispersion or polarization. In this study, the problem of a hot spot in a submicron silicon-on-insulator transistor is addressed. A model based on the BTE incorporating full phonon dispersion effects is used. A structured finite volume approach is used to solve the BTE. The results from the full phonon dispersion model are compared to those obtained using a Fourier diffusion model. Comparisons are also made to previously published BTE models employing gray and semi-gray approximations. Significant differences are found in the maximum hot spot temperature predicted by the different models. Fourier diffusion underpredicts the hot spot temperature by as much as 350% with respect to predictions from the full phonon dispersion model. For the full phonon dispersion model, the longitudinal acoustic modes are found to carry a majority of the energy flux. The importance of accounting for phonon dispersion and polarization effects is clearly demonstrated.
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Comparison of Different Phonon Transport Models for Predicting Heat Conduction in Silicon-on-Insulator Transistors
Sreekant V. J. Narumanchi,
Sreekant V. J. Narumanchi
Institute for Complex Engineered Systems and Department of Mechanical Engineering,
Carnegie Mellon University
, 5000 Forbes Ave, Pittsburgh, PA 15213
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Jayathi Y. Murthy,
Jayathi Y. Murthy
School of Mechanical Engineering,
e-mail: jmurthy@ecn.purdue.edu.
Purdue University
, 585 Purdue Mall, W. Lafayette, IN 47907
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Cristina H. Amon
Cristina H. Amon
Institute for Complex Engineered Systems and Department of Mechanical Engineering,
Carnegie Mellon University
, 5000 Forbes Ave, Pittsburgh, PA 15213
Search for other works by this author on:
Sreekant V. J. Narumanchi
Institute for Complex Engineered Systems and Department of Mechanical Engineering,
Carnegie Mellon University
, 5000 Forbes Ave, Pittsburgh, PA 15213
Jayathi Y. Murthy
School of Mechanical Engineering,
Purdue University
, 585 Purdue Mall, W. Lafayette, IN 47907e-mail: jmurthy@ecn.purdue.edu.
Cristina H. Amon
Institute for Complex Engineered Systems and Department of Mechanical Engineering,
Carnegie Mellon University
, 5000 Forbes Ave, Pittsburgh, PA 15213J. Heat Transfer. Jul 2005, 127(7): 713-723 (11 pages)
Published Online: March 1, 2005
Article history
Received:
August 11, 2003
Revised:
March 1, 2005
Citation
Narumanchi, S. V. J., Murthy, J. Y., and Amon, C. H. (March 1, 2005). "Comparison of Different Phonon Transport Models for Predicting Heat Conduction in Silicon-on-Insulator Transistors." ASME. J. Heat Transfer. July 2005; 127(7): 713–723. https://doi.org/10.1115/1.1924571
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